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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB

Place of Origin United States
Brand Name Infineon Technologies
Certification RoHS
Model Number IRFB7434PBF
Minimum Order Quantity 50 PCS
Price Negotiable
Packaging Details 50 PCS/Tube
Delivery Time 2-3 DAYS
Payment Terms L/C, D/A, D/P, T/T
Supply Ability 20K PCS

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Product Details
Category Single FETs, MOSFETs Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 324 NC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10820 PF @ 25 V
Power Dissipation (Max) 294W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-220AB
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Product Description

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB

 

Features:

Category Single FETs, MOSFETs
Mfr Infineon Technologies
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 324 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10820 pF @ 25 V
Power Dissipation (Max) 294W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names SP001575514
  2156-IRFB7434PBF
  IFEINFIRFB7434PBF
Standard Package 50

Data Picture:https://www.infineon.com/dgdl/irfb7434pbf.pdf?fileId=5546d462533600a401535616a43e1e55

 

 

 

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