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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB
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xCategory | Single FETs, MOSFETs | Mfr | Infineon Technologies |
---|---|---|---|
Series | HEXFET®, StrongIRFET™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain To Source Voltage (Vdss) | 40V | Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 324 NC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 10820 PF @ 25 V |
Power Dissipation (Max) | 294W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Supplier Device Package | TO-220AB |
High Light | mosfet n channel logic level,n channel mosfet ic,to 220ab mosfet |
IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB
Features:
Category | Single FETs, MOSFETs |
Mfr | Infineon Technologies |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V |
Power Dissipation (Max) | 294W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Additional Resources
ATTRIBUTE | DESCRIPTION |
Other Names | SP001575514 |
2156-IRFB7434PBF | |
IFEINFIRFB7434PBF | |
Standard Package | 50 |
Data Picture:https://www.infineon.com/dgdl/irfb7434pbf.pdf?fileId=5546d462533600a401535616a43e1e55
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