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FGD3N60UNDF Discrete Semiconductor Products IGBT NPT 600V 6 A 60W Surface Mount TO-252AA
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xProduct Details
Manufacturer | Onsemi | Category | Single IGBTs |
---|---|---|---|
Product Number | FGD3N60UNDF | IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 600 V | Current - Collector (Ic) (Max) | 6A |
Current - Collector Pulsed (Icm) | 9A | Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 3A |
Power - Max | 60W | Switching Energy | 52µJ (on), 30µJ (off) |
Input Type | Standard | Gate Charge | 1.6 NC |
Td (on/off) @ 25°C | 5.5ns/22ns | Test Condition | 400V, 3A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 21 Ns | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252AA | ||
High Light | FGD3N60UNDF,Discrete Semiconductor Products,diode and transistor |
Product Description
FGD3N60UNDF IGBT NPT 600 V 6 A 60 W Surface Mount TO-252AA
Datasheet:FGD3N60UNDF
Category | Single IGBTs |
Mfr | onsemi |
Product Status | Obsolete |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 6 A |
Current - Collector Pulsed (Icm) | 9 A |
Vce(on) (Max) @ Vge, Ic | 2.52V @ 15V, 3A |
Power - Max | 60 W |
Switching Energy | 52µJ (on), 30µJ (off) |
Input Type | Standard |
Gate Charge | 1.6 nC |
Td (on/off) @ 25°C | 5.5ns/22ns |
Test Condition | 400V, 3A, 10Ohm, 15V |
Reverse Recovery Time (trr) | 21 ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | TO-252AA |
Base Product Number | FGD3N60 |
Additional Resources
ATTRIBUTE | DESCRIPTION |
Other Names | FGD3N60UNDFCT |
FGD3N60UNDFTR | |
FGD3N60UNDFDKR | |
Standard Package | 2500 |
Data Picture:https://www.onsemi.com/pdf/datasheet/fgd3n60undf-d.pdf
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