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ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK

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xCategory | Single FETs, MOSFETs | Mfr | Onsemi |
---|---|---|---|
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain To Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 92 NC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000 PF @ 20 V | Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | ATPAK | Package / Case | ATPAK (2 Leads+Tab) |
Highlight | P-Channel Mosfets 60 V 55A Ta 60W Tc ATP114-TL-H,P-Channel Mosfets 60 V Ta 60W Tc ATP114-TL-H,P-Channel Mosfets 60 V Ta 60W ATP114-TL-H |
ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK
Features:ATP114-TL-H
Category | Single FETs, MOSFETs |
Mfr | onsemi |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 20 V |
Power Dissipation (Max) | 60W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | ATPAK |
Package / Case | ATPAK (2 Leads+Tab) |
Base Product Number | ATP114 |
Additional Resources
ATTRIBUTE | DESCRIPTION |
Other Names | ATP114-TL-HOSDKR |
ATP114-TL-HOSTR | |
ATP114-TL-H-ND | |
ATP114-TL-HOSCT | |
Standard Package | 3000 |
Data Picture:https://www.mouser.cn/datasheet/2/308/1/ATP114_D-2310176.pdf
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