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FDC6321C Power Mosfet Array Ic 25V 680mA 460mA 700mW Surface Mount SuperSOT™-6

Place of Origin United States
Brand Name onsemi
Certification RoHS
Model Number FDC6321C
Minimum Order Quantity 3000PCS
Price Negotiable
Packaging Details 3000PCS/Tape
Delivery Time 2-3 DAYS
Payment Terms L/C, D/A, D/P, T/T
Supply Ability 30K PCS

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Product Details
Manufacturer Onsemi Category FET, MOSFET Arrays
Product Number FDC6321C Technology MOSFET (Metal Oxide)
Configuration N And P-Channel FET Feature Logic Level Gate
Drain To Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 680mA, 460mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 5V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 700mW Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
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Power Mosfet Array Ics 25V 680mA FDC6321C

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Power Mosfet Array Ics 25V FDC6321C

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Power Mosfet Array Ics 680mA FDC6321C

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Product Description

FDC6321C Mosfet Array 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6

 

Datasheet:FDC6321C

Category FET, MOSFET Arrays
Mfr onsemi
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 680mA, 460mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Base Product Number FDC6321

Additional Resources

ATTRIBUTE DESCRIPTION
Other Names FDC6321CTR
  FDC6321CCT
  FDC6321C-ND
  FDC6321CDKR
Standard Package 3000

 

Data Picture:https://www.onsemi.com/pdf/datasheet/fdc6321c-d.pdf
FDC6321C Power Mosfet Array Ic 25V 680mA 460mA 700mW Surface Mount SuperSOT™-6 0