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AT28HC64BF-12SU Parallel EEPROM Memory IC Chip Manufacturers 64Kbit 120 Ns 28-SOIC

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xCategory | Memory | Mfr | Microchip Technology |
---|---|---|---|
Package | Tube | Memory Type | Non-Volatile |
Memory Format | EEPROM | Technology | EEPROM |
Memory Size | 64Kbit | Memory Organization | 8K X 8 |
Memory Interface | Parallel | Access Time | 120 Ns |
Voltage - Supply | 4.5V ~ 5.5V | Operating Temperature | -40°C ~ 85°C (TC) |
High Light | AT28HC64BF-12SU IC 64Kbit 28-SOIC,IC 64Kbit 28-SOIC AT28HC64BF-12SU,IC 28-SOIC 64Kbit AT28HC64BF-12SU |
AT28HC64BF-12SU EEPROM Memory IC 64Kbit Parallel 120 Ns 28-SOIC
Description:
The AT28HC64BF is a high-performance electrically-erasable and programmable read-only memory (EEPROM).
Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS
technology, the device offers access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
Quick Detail:
Manufacturer
|
Microchip Technology
|
Manufacturer Product Number
|
AT28HC64BF-12SU
|
Manufacturer Standard Lead Time
|
52 Weeks
|
Detailed Description
|
EEPROM Memory IC 64Kbit Parallel 120 ns 28-SOIC
|
Product Attributes:
TYPE
|
DESCRIPTION
|
Category
|
Memory
|
Mfr
|
Microchip Technology
|
Package
|
Tube
|
Product Status
|
Active
|
Memory Type
|
Non-Volatile
|
Memory Format
|
EEPROM
|
Technology
|
EEPROM
|
Memory Size
|
64Kbit
|
Memory Organization
|
8K x 8
|
Memory Interface
|
Parallel
|
Write Cycle Time - Word, Page
|
10ms
|
Access Time
|
120 ns
|
Voltage - Supply
|
4.5V ~ 5.5V
|
Operating Temperature
|
-40°C ~ 85°C (TC)
|
Mounting Type
|
Surface Mount
|
Package / Case
|
28-SOIC (0.295", 7.50mm Width)
|
Supplier Device Package
|
28-SOIC
|
Base Product Number
|
AT28HC64
|
Additional Resources:
ATTRIBUTE | DESCRIPTION |
Other Names | AT28HC64BF12SU |
Standard Package | 27 |
Features
• Fast Read Access Time – 70 ns
• Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
– Page Write Cycle Time: 2 ms Maximum (Standard)
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Single 5 V ±10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Industrial Temperature Ranges
• Green (Pb/Halide-free) Packaging Only
Data Picture: