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MT25QL256ABA8E12-1SIT TR Micron NOR Flash Memory Ic Chip 256Mbit SPI 133 MHz 24-T-PBGA 6x8

Place of Origin United States
Brand Name Micron Technology Inc.
Certification RoHS
Model Number MT25QL256ABA8E12-1SIT
Minimum Order Quantity 1122PCS
Price Negotiable
Packaging Details 1122 PCS/Tape
Delivery Time 2-3 DAYS
Payment Terms L/C, D/A, D/P, T/T
Supply Ability 10K PCS

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Product Details
Manufacturer Micron Technology Inc. Category Memory
Product Number MT25QL256ABA8E12-1SIT Product Status Active
Memory Type Non-Volatile Memory Format FLASH
Technology FLASH - NOR Memory Size 256Mbit
Memory Organization 32M X 8 Memory Interface SPI
Write Cycle Time - Word, Page 8ms, 2.8ms Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 24-TBGA Supplier Device Package 24-T-PBGA (6x8)
Base Product Number MT25QL256
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Product Description

MT25QL256ABA8E12-1SIT FLASH - NOR Memory IC 256Mbit SPI 133 MHz 24-T-PBGA (6x8)

 

Datasheet:MT25QL256ABA8E12-1SIT

Category Memory
Mfr Micron Technology Inc.
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mb
Memory Organization 32M x 8
Memory Interface SPI
Clock Frequency 133 MHz
Write Cycle Time - Word, Page 8ms, 2.8ms
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C(TA)
Mounting Type Surface Mount
Package / Case 24-TBGA
Supplier Device Package 24-T-PBGA (6x8)
Base Product Number MT25QL256

 

Features

• SPI-compatible serial bus interface

• Single and double transfer rate (STR/DTR)

• Clock frequency

– 133 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

• Dual/quad I/O commands for increased throughput up to 90 MB/s

• Supported protocols: Extended, Dual and Quad I/O both STR and DTR

• Execute-in-place (XIP)

• PROGRAM/ERASE SUSPEND operations

• Volatile and nonvolatile configuration settings

• Software reset

• Additional reset pin for selected part numbers

• 3-byte and 4-byte address modes

– enable memory access beyond 128Mb

• Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

– Permanent lock with PROGRAM OTP command

• Erase capability

– Bulk erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

• Erase performance: 400KB/sec (64KB sector)

• Erase performance: 80KB/sec (4KB sub-sector)

• Program performance: 2MB/sec

• Security and write protection

– Volatile and nonvolatile locking and software write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

• Electronic signature

– JEDEC-standard 3-byte signature (BA19h)

– Extended device ID: two additional bytes identify device factory options

• JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)

Options

Voltage
2.7-3.6V-
Density
- 256Mb
Device stacking
- Monolithic
Device generation
Die revision
Pin configuration
- RESET# and HOLD#
Sector size
- 64KB
Packages - JEDEC-standard, RoHScompliant
- 24-ballT-PBGA 05/6mm x 8mm(5 x 5 arraw)
24-ballT-PBGA 05/6mm x 8mm(4 x 6 array)
16-pin SoP2, 300 mils
(SO16W,S016-Wide,SoIC-16)
W-PDFN-8 6mm x 5mm
lP8 6mm x 5mm
W-PDFN-8 8mm x 6mm(MLP8 8mm x 6mmSecurity features
Standard security
Special options
Standard
Automotive
Operating temperature range
From -40°C to +85C
From -40°C to +105°C-
- From-40°C to +125°C

Data Picture:
MT25QL256ABA8E12-1SIT TR Micron NOR Flash Memory Ic Chip 256Mbit SPI 133 MHz 24-T-PBGA 6x8 0MT25QL256ABA8E12-1SIT TR Micron NOR Flash Memory Ic Chip 256Mbit SPI 133 MHz 24-T-PBGA 6x8 1